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  t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 1 of 6 1n5283 -1 thru 1n5314 -1 available on commercial versions current regulator diodes qualified per mil -prf- 19500/463 qua l ified levels: jan, jantx, jantxv and jans description the popular 1n5283 - 1 thru 1 n5314 - 1 series of 0.5 watt current regulators provides a selection from 0.22 ma to 4.7 ma in standard 10% tolerances. these devices regulate current ov er a broad voltage range as a counter part offering to zeners (that regulate voltage over a broad curren t range ) in similar size axial - leaded packages. the somewhat larger do - 7 packaging option offers a double - plug internal bond connection with a larger active die element for its unique function as a current limiter. microsemi also offers numerous other zener products to meet higher and lower power voltage regulation applications. do -7 package also available in : do - 213ab p ackage (surface mount) 1n5283ur - 1 to 1n531 4ur -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n5 283 thru 1n5 314 . ? high source impedance. ? internal metallurgical bond . ? jan, jantx, jantxv , and jans qualification s are available per mil - prf - 19500/463 . ? chips also available as janhc and jankc . ? rohs compliant versions available (commercial grade only) . applications / benefits ? double - plug construction. ? regulates current over a broad operating voltage and temperature range . ? extensive selection from 0.22 ma to 4.7 ma . ? standard current tolerances are plus/minus 10%. ? flexible axial - lead mounting terminals . ? non - sensitive to esd. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +175 o c thermal resistance junction - to - lead @ l = .375 in r ? jl 250 o c /w thermal impedance z ? jx 25 o c /w steady - state power dissipation @ t l = +50 o c, l = 3/8 (1) p d 500 mw working peak voltage v wm 100 v solder pad temperature @ 10 s max. t sp 260 o c notes : 1. derate at 4 mw / c above +50 o c. downloaded from: http:///
t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 2 of 6 1n5283 -1 thru 1n5314 -1 mechanical and packaging ? case: hermetically sealed glass case . ? terminal s: tin/ l ead finished c opper clad steel or rohs compliant matte - tin finish available (commercial grade only). ? marking: part number and cathode band. ? polarity: diode to be operated with the banded (cathode) end negative. ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? w eight: 0.2 grams . ? see p ackage d imensions on last page. part nomenclature jan 1n5 283 -1 (e3) reliability level jan = jan level jantx = jant x level jantxv = jantx v level jans = jans level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compli ance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant metallurgical ly bond ed symbols & definitions symbol definition i l limiting current: a specified current below the lower knee of the current - regulating characte ristic. i s regulator current: a current within the regulating range of a current - regulator diode. p d power dissipation: the power dissipation, dc. r ?jl thermal resistance junction - to - lead: the thermal resistance from the virtual junction(s) of a semiconducter device to the lead. t l lead temperature: the temperature of a lead terminal. t sp temperature solder pad: the maximum solder temperature that can be safely applied to the terminal. v k knee voltage: a specified regulator voltage near the lower knee of the current - regulating characteristic. v l limiting voltage: the voltage at point i l on the current - voltage characteristic. v s regulator voltage: a voltage within the regulating range of a current - regulating diode. z k knee impedance: the small - signal impedance at operating point vk on the current - voltage characteristic. z s regulator impedance: the small - signal impedance within the regulating range of a current - regulator diode. z ?jx thermal impedance: the thermal impedance junction to reference point. downloaded from: http:///
t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 3 of 6 1n5283 -1 thru 1n5314 -1 electrical characteristics (t a = 25c, unless otherwise specified) type number regulator current i s (ma) @ v s = 25 v minimum dynamic impedance @v s = 25 v z s (m ? ) (note 1) minimum knee impedance @v k = 6.0 v z k (m ? ) (note 2) max im um limit ing voltage @ l l = 0.8 i s (min) v l (v olts ) nom min ma x 1n5283 1n5284 1n5285 1n5286 1n5287 0.22 0.24 0.27 0.30 0.33 0.198 0.216 0.243 0.270 0.297 0.242 0.264 0.297 0.330 0.363 25.0 0 19.0 0 14.0 0 9.0 00 6.6 00 2.75 0 2.35 0 1.95 0 1.60 0 1.35 0 1.00 1.00 1.00 1.00 1.00 1n5288 1n5289 1n5290 1n5291 1n5292 0.39 0.43 0.47 0.56 0.62 0.351 0.387 0.423 0.504 0.558 0.429 0.473 0.517 0.616 0.682 4.10 0 3.30 0 2.70 0 1.90 0 1.55 0 1.00 0 0.870 0.750 0.560 0.470 1.05 1.05 1.05 1.10 1.13 1n5293 1n5294 1n5295 1n5296 1n5297 0.68 0.75 0.82 0.91 1.00 0.612 0.675 0.738 0.819 0.900 0.748 0.825 0.902 1.001 1.100 1.35 0 1.15 0 1.00 0 0.880 0.800 0.400 0.335 0.290 0.240 0.205 1.15 1.20 1.25 1.29 1.35 1n5298 1n5299 1n5300 1n5301 1n5302 1.10 1.20 1.30 1.40 1.50 0.990 1.08 0 1.17 0 1.2 60 1.35 0 1.210 1.32 0 1.43 0 1.54 0 1.65 0 0.700 0.640 0.580 0.540 0.510 0.180 0.155 0.135 0.115 0.105 1.40 1.45 1.50 1.55 1.60 1n5303 1n5304 1n5305 1n5306 1n5307 1.60 1.80 2.00 2.20 2.40 1.44 0 1.62 0 1.80 0 1.98 0 2.16 0 1.76 0 1.98 0 2.20 0 2.42 0 2.64 0 0.475 0.420 0.395 0.370 0.345 0.092 0.074 0.061 0.052 0.044 1.65 1.75 1.85 1.95 2.00 1n5308 1n5309 1n5310 1n5311 1n5312 2.70 3.00 3.30 3.60 3.90 2.43 0 2.70 0 2.97 0 3.24 0 3.51 0 2.97 0 3.30 0 3.63 0 3.96 0 4.29 0 0.320 0.300 0.280 0.265 0.255 0.035 0.029 0.024 0.020 0.017 2 .15 2.25 2.35 2.50 2.60 1n5313 1n5314 4.30 4.70 3.87 0 4.23 0 4.73 0 5.17 0 0.245 0.235 0.014 0.012 2.75 2.90 note 1: z s is derived by superimposing a 90 hz rms signal equal to 10% of v s on v s . note 2: z k is derived by superimposing a 90 hz rms signal equ al to 10% of v k on v k . downloaded from: http:///
t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 4 of 6 1n5283 -1 thru 1n5314 -1 graphs figure 1 C current - regulator characteristics i s nominal pinch - off current (ma) figure 2 C temperature coefficient t c temperature coefficient (% / c) downloaded from: http:///
t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 5 of 6 1n5283 -1 thru 1n5314 -1 graphs (continued) i s n ominal pinch - off current (ma ) figure 3 C temperature coefficient i s nominal pinch - off current (ma) figure 4 C current regulation factor t c temperat ure 3 i p current change (ma) downloaded from: http:///
t4 - lds - 0159, rev . 2 (111541) ?2011 microsemi corporation page 6 of 6 1n5283 -1 thru 1n5314 -1 package dimensions sy mbol d ime n si ons i nc h m illime ters min max min max bd . 060 . 107 1. 52 2. 72 bl . 120 . 300 3. 05 7. 62 ld . 018 . 023 0. 46 0. 58 ll 1. 000 1. 500 25 . 40 38 . 10 ll 1 0. 050 1. 27 not es: 1 . dimen sio ns are in in ch es. 2 . m illim ete rs a re gi ven fo r ge ne ral in for ma t io n onl y. 3 . the m in i mu m body di a me te r sh al l be ma intai ne d ove r . 15 inch (3.81 mm ) inch of bod y leng t h. 4 . the specified lead dia me te r app l ie s in the zone betw ee n . 05 0 i nc h (1.27 mm ) a nd the end of the le ad . out si de of this z on e the lea d di a me te r s hal l no t ex cee d l d. 5 . bo th le ad s sh al l be wit hi n the s pe cified dime ns i on. 6 . see 3 .3 fo r l an d t l definit ion s. 7 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x s ym bo l og y. downloaded from: http:///


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